Investigation of CsPbBr3 CVD dynamics at various temperatures

文献情報

出版日 2021-09-28

DOI 10.1039/D1CP03794C

インパクトファクター 3.676

著者

Chenyang Bao, Xiang Peng, Leiying Ying, Yang Mei, Baoping Zhang, Hao Long

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要旨

Since the emerging development of CsPbBr3 perovskite, chemical vapor deposition (CVD) has become one of the most promising fabrication techniques by which to precisely deposit uniform perovskite thin films. However, there have been few reports on the growth dynamics and chemical reaction parameters (e.g., activation energy) for perovskite CVD. In this work, different deposition rates of CVD-grown CsPbBr3 thin films were obtained at different substrate temperatures. Dynamics equations were developed to relate the inflow rates, desorption coefficients and concentrations of reactants on the substrates. Only a small amount of reactant became activated at low temperature and a small amount of PbBr2 resided on the substrate at high temperature, and accordingly the maximal deposition rate was achieved at 250 °C. The Arrhenius activation energy of CVD-grown CsPbBr3 was also calculated, and found to be 31.64 kJ mol−1. We believe that our work provides a detailed picture of perovskite CVD growth.

掲載誌

Physical Chemistry Chemical Physics

CiteScore: 5.5

自己引用率: 10.3%

年間論文数: 3036

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