Formation of a built-in field at the porphyrin/ITO interface directly proven by the time-resolved photovoltage technique
文献情報
Li-Na Han, Cheng-Yu Mao, De-Jun Wang, Xin-Hao Li, Ping-Yun Feng, Jie-Sheng Chen
Two assemblies, porphyrin powder/ITO and porphyrin film/ITO, were built by a facile method. The time-resolved photovoltage technique was utilized to prove the behaviour of photo-induced charges in the two assemblies. The photovoltage results show that the porphyrin film/ITO assembly displays a reversal polarity response, which is different from the response of porphyrin powder/ITO. This phenomenon is due to the effect of a built-in field on photo-induced charge behaviour at the porphyrin film/ITO interface. This result is beneficial for the development of a measuring method for detecting heterojunction interface formation and understanding the photoelectric process in photoelectric materials and devices.
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