Size effect on excess resistivity induced by hydrogen in ultra-thin vanadium systems
文献情報
Martin Brischetto, Parker Steichen, Mingkai Li, Björgvin Hjörvarsson
Through combining a four-point probe and an optical technique, a profound vanadium(V) size effect on the change in excess resistivity during hydrogenation is observed in Fen/V7n (n = 2, 4) superlattices at c ≥ 0.05 H/V. This phenomenon highly emphasizes the effect of interface and H–H interaction on the electrical properties of hydrogen in these systems.
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