Influence of the type of carrier on ferromagnetism in a Si semiconductor implanted with Cu ions

文献情報

出版日 2020-03-09

DOI 10.1039/C9CP05608D

インパクトファクター 3.676

著者

Li Wang, Denglu Hou, Chunfang Wu, Yuanping Shi, Shaohui Shi, Weikun Gao, Shunzhen Feng, Yingdi Liu, Li Li, Denghui Ji

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要旨

Silicon semiconductor samples implanted with Cu ions and samples co-implanted with Cu- and N-ions were prepared by MEVVA and the Kaufman technique. None of the samples showed evidence of secondary phases. The initially n-type Si matrix, when implanted with Cu ions, changed to a p-type semiconductor, and the Cu ions existed as local Cu2+ cations in the p-type environment. As a result, none of the Cu-implanted samples were ferromagnetic at room temperature. The co-implanted samples, on the other hand, showed room-temperature ferromagnetism because the introduction of N ions made the carrier type change from p-type to n-type which is favorable for the appearance of Cu2+. First principles calculations were applied to understand the experimental phenomena. The formation energy was reduced by implanting N ions, and was decreased effectively with the increase in ratio of N to Cu ions. The density of states and spin density of states indicated that the hybridization of s, p and d electrons induced ferromagnetism at 0 K. Particularly, we proposed possible exchange interactions between the Cu2+–N−(N4+)–Cu2+ ions to explain the ferromagnetism mechanism.

掲載誌

Physical Chemistry Chemical Physics

CiteScore: 5.5

自己引用率: 10.3%

年間論文数: 3036

Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions. The journal has a broad scope and welcomes contributions spanning experiment, theory, computation and data science. Topical coverage includes spectroscopy, dynamics, kinetics, statistical mechanics, thermodynamics, electrochemistry, catalysis, surface science, quantum mechanics, quantum computing and machine learning. Interdisciplinary research areas such as polymers and soft matter, materials, nanoscience, energy, surfaces/interfaces, and biophysical chemistry are welcomed if they demonstrate significant innovation and/or insight into physical chemistry. Joined experimental/theoretical studies are particularly appreciated when complementary and based on up-to-date approaches.

Influence of the type of carrier on ferromagnetism in a Si semiconductor implanted with Cu ions

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