A novel porphyrin-containing polyimide for memory devices

文献情報

出版日 2016-03-31

DOI 10.1039/C6PY00158K

インパクトファクター 5.582

著者

Ming-Chi Tsai, Chin-Li Wang, Ching-Yao Lin, Chia-Liang Tsai, Hung-Ju Yen, Huei-Chi You, Guey-Sheng Liou

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要旨

We design a novel solution-processable polyimide ZnPor-t-DSDA with porphyrin moiety (electron donor) and sulfone-containing phthalimide (electron acceptor) for polymer memory applications. The resulting memory device can be switched from low-conductivity (OFF) to high-conductivity (ON) by both positive and negative sweeps, exhibiting symmetry biswitching characteristic with a short retention time (30 s). On the basis of the simulation calculation, the coplanar structure between donor and acceptor units results in charge transferring easily back to its original state after being excited by an electric field.

掲載誌

Polymer Chemistry

CiteScore: 8.6

自己引用率: 7.3%

年間論文数: 457

Polymer Chemistry welcomes submissions in all areas of polymer science that have a strong focus on macromolecular chemistry. Manuscripts may cover a broad range of fields, yet no direct application focus is required.

A novel porphyrin-containing polyimide for memory devices

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