IEEE Transactions on Device and Materials Reliability
基本情報
IEEE Transactions on Device and Materials Reliability includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectations. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
CiteScore
| 分野 | ランク | パーセンタイル |
|---|---|---|
EngineeringSafety, Risk, Reliability and Quality |
65 / 207 | 68% |
ジャーナル統計
投稿情報
投稿サイト:
http://mc.manuscriptcentral.com/tdmr関連論文
Conformational selection underpins recognition of multiple DNA sequences by proteins and consequent functional actions
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DOI: 10.1039/C6CP03278H
Evaluation of the energy barrier for failure of Au atomic contact based on temperature dependent current–voltage characteristics
Akira Aiba, Satoshi Kaneko, Shintaro Fujii, Tomoaki Nishino, Manabu Kiguchi
DOI: 10.1039/C6CP03437C
On the lack of evolutionary continuity between prebiotic peptides and extant enzymes
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Optically active multi-helical erythrocyte-like Ln(OH)CO3 (Ln = La, Ce, Pr and Sm)
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DOI: 10.1039/C6CP02302A
Possible interstellar formation of glycine through a concerted mechanism: a computational study on the reaction of CH2NH, CO2 and H2
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DOI: 10.1039/C5CP07124K
The non-dominance of counterions in charge-asymmetric electrolytes: non-monotonic precedence of electrostatic screening and local inversion of the electric field by multivalent coions
Guillermo Iván Guerrero-García, Enrique González-Tovar, Manuel Quesada-Pérez, Alberto Martín-Molina
DOI: 10.1039/C6CP03483G
Insights into collective cell behaviour from populations of coupled chemical oscillators
Annette F. Taylor, Mark R. Tinsley, Kenneth Showalter
DOI: 10.1039/C5CP01964H
Bond angle variations in XH3 [X = N, P, As, Sb, Bi]: the critical role of Rydberg orbitals exposed using a diabatic state model
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DOI: 10.1039/C5CP02237A
Topography evolution of 500 keV Ar4+ ion beam irradiated InP(100) surfaces – formation of self-organized In-rich nano-dots and scaling laws
Indra Sulania, Dinesh C. Agarwal, Manish Kumar, Sunil Kumar, Pravin Kumar
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Complexes of a naphthalimide photoacid with organic bases, and their excited-state dynamics in polar aprotic organic solvents
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