Large Rashba splitting, carrier mobility, and valley polarization in a 1T-SnS2/MoTe2 heterostructure

文献情報

出版日 2021-07-07

DOI 10.1039/D1CP02039K

インパクトファクター 3.676

著者

Sukai Teng, Jia Li, Xiujuan Mao, Fuli He, Ze Liu, Jiaxi Wang, Yafan Wang

原文を見る

要旨

The structural and electronic properties of the 1T-SnS2/MoTe2 heterostructure were investigated based on density functional theory and Berry curvature calculations. Considering the strong spin–orbit coupling and space inversion asymmetry, large Rashba spin splitting of electronic bands appeared in this hybrid system. The Rashba coupling parameter αR in 1T-SnS2/MoTe2 reached 0.383 eV Å. Importantly, αR can be effectively tuned by biaxial strain. Moreover, our first-principles calculations show that the 1T-SnS2/MoTe2 heterostructure possesses a high carrier mobility of 5038.46 cm2 V−1 s−1. The Berry curvature and spin splitting were opposite at the K and K′ valleys. Hence, the valleys and spins were simultaneously locked and polarized, and the valley and spin Hall effects simultaneously occurred.

掲載誌

Physical Chemistry Chemical Physics

CiteScore: 5.5

自己引用率: 10.3%

年間論文数: 3036

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