Strength of electronic decoupling of fullerene on an AuSiX layer formed on Au(111)
文献情報
Kewei Sun
Electronic properties of molecules and carbon nanomaterials are usually affected by metal substrates. An electronic decoupling buffer layer is of importance to reveal their intrinsic properties. Here, the strength of electronic decoupling by a gold silicide buffer layer formed on Au(111) was studied using scanning tunneling microscopy/spectroscopy. The HOMO–LUMO gap of fullerene adsorbed on the buffer layer is approximately 3.0 eV, which is in between that on bare Au(111) and on a NaCl bilayer film, indicating a moderate decoupling.
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Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions. The journal has a broad scope and welcomes contributions spanning experiment, theory, computation and data science. Topical coverage includes spectroscopy, dynamics, kinetics, statistical mechanics, thermodynamics, electrochemistry, catalysis, surface science, quantum mechanics, quantum computing and machine learning. Interdisciplinary research areas such as polymers and soft matter, materials, nanoscience, energy, surfaces/interfaces, and biophysical chemistry are welcomed if they demonstrate significant innovation and/or insight into physical chemistry. Joined experimental/theoretical studies are particularly appreciated when complementary and based on up-to-date approaches.











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