The reconstruction of the symmetry between sublattices: a strategy to improve the transport properties of edge-defective graphene nanoribbon transistors

文献情報

出版日 2020-06-09

DOI 10.1039/D0CP01684E

インパクトファクター 3.676

著者

Shizhuo Ye, Hao Wang, Minzheng Qiu, Yi Zeng, Qijun Huang, Jin He, Sheng Chang

原文を見る

要旨

A numerical study that combines device simulation and first-principle calculations is performed, aiming to alleviate the performance degradation of graphene nanoribbon field-effect devices with edge defects. We believe that investigating the symmetry between the sublattices of graphene is a novel approach to understand this key problem. The results show that the edge defects that break the symmetry between the sublattices of graphene cause more severe degradation of the device performance because they induce highly localized electronic states, which dramatically affect the transport of carriers. We propose a strategy to alleviate the localization of electronic states by rebuilding the symmetry between the sublattices. This strategy can be realized by introducing foreign radicals to modify the defective edge. A stability analysis is performed to find the most stable modified structures. The final effect of our strategy on the corresponding devices demonstrates that it can effectively address specific edge defects and remarkably improve the ON-state current and subthreshold swing.

掲載誌

Physical Chemistry Chemical Physics

CiteScore: 5.5

自己引用率: 10.3%

年間論文数: 3036

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