Phases and thermoelectric properties of SnTe with (Ge, Mn) co-doping

文献情報

出版日 2017-10-02

DOI 10.1039/C7CP04931E

インパクトファクター 3.676

著者

J. Q. Li, S. Huang, Z. P. Chen, Y. Li, S. H. Song, F. S. Liu, W. Q. Ao

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要旨

A lead-free SnTe compound shows good electrical properties but also high thermal conductivity, resulting in a low figure of merit ZT. We demonstrate a significant enhancement of the thermoelectric properties of SnTe by (Ge, Mn) co-doping. (Ge, Mn) co-doped samples (Sn0.8Ge0.2)1−xMnxTe with x = 0, 0.03, 0.06, 0.09, 0.12, 0.15, 0.18 and 0.2 were prepared for this investigation. The substitution of Ge for Sn in SnTe promotes the solubility of Mn in a SnTe-based phase up to 20 at%, which further enlarges the band gap and gives rise to enhanced valence band convergence as compared with Mn doping, leading to a notably increased Seebeck coefficient and a power factor. All alloys retain p-type conduction and hole carrier concentration increases with increasing Mn content. The solute Ge and Mn atoms as well as the second phase of Ge in a SnTe-based system enhance phonon scattering and thus reduce thermal conductivity. The synergistic role that Ge and Mn play in regulating the electron and phonon transport of SnTe yields a maximum figure of merit ZT of 1.22 at 873 K for the sample (Sn0.8Ge0.2)0.85Mn0.15Te.

掲載誌

Physical Chemistry Chemical Physics

CiteScore: 5.5

自己引用率: 10.3%

年間論文数: 3036

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