Negative photoconductivity of InAs nanowires

文献情報

出版日 2015-11-17

DOI 10.1039/C5CP06139C

インパクトファクター 3.676

著者

Yuxiang Han, Xiao Zheng, Mengqi Fu, Dong Pan, Xing Li, Yao Guo, Jianhua Zhao, Qing Chen

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要旨

Negative photoconductivity is observed in InAs nanowires (NWs) without a surface defective layer. The negative photoconductivity is strongly dependent on the wavelength and intensity of the light, and is also sensitive to the environmental atmosphere. Two kinds of mechanisms are discerned to work together. One is related to gas adsorption, which is photodesorption of water molecules and photo-assisted chemisorption of O2 molecules. The other one can be attributed to the photogating effect introduced by the native oxide layer outside the NWs.

掲載誌

Physical Chemistry Chemical Physics

CiteScore: 5.5

自己引用率: 10.3%

年間論文数: 3036

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