Stable n-type doping of graphene via high-molecular-weight ethylene amines

文献情報

出版日 2015-10-13

DOI 10.1039/C5CP03196F

インパクトファクター 3.676

著者

Insu Jo, Joonhee Moon, Subeom Park, Jin San Moon, Won Bae Park, Jeong Soo Lee, Byung Hee Hong

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要旨

We demonstrate a stable and strong n-type doping method to tune the electrical properties of graphene via vapor phase chemical doping with various high-molecular-weight ethylene amines. The resulting carrier concentration after doping with pentaethylenehexamine (PEHA) is as high as −1.01 × 1013 cm−2, which reduces the sheet resistance of graphene by up to ∼400% compared to pristine graphene. Our study suggests that the branched structure of the dopant molecules is another important factor that determines the actual doping degree of graphene.

掲載誌

Physical Chemistry Chemical Physics

CiteScore: 5.5

自己引用率: 10.3%

年間論文数: 3036

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