Trapping during hopping conduction of electronic defects: A conductivity model for doped transition metal oxides
文献情報
Trapping of electronic defects by dopants, B, and the implications for the electronic conductivity of doped, p-type transition metal oxides, AO, with prevailing hopping conduction of electron holes are analyzed. It is shown that free electron holes as well as electron holes which are trapped by the dopant ions, B, contribute to the electronic conductivity. We derive analytical expressions for the partial conductivities of free and trapped electron holes by translating results from the five-frequency model of impurity diffusion to the conductivity problem. The partial conductivity of trapped electron holes is proportional to the fraction of pairs between electron holes and dopants and the inverse lifetime of the pairs. Our results are applied to acceptor doped oxides and to homovalently doped oxides as well.
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Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions. The journal has a broad scope and welcomes contributions spanning experiment, theory, computation and data science. Topical coverage includes spectroscopy, dynamics, kinetics, statistical mechanics, thermodynamics, electrochemistry, catalysis, surface science, quantum mechanics, quantum computing and machine learning. Interdisciplinary research areas such as polymers and soft matter, materials, nanoscience, energy, surfaces/interfaces, and biophysical chemistry are welcomed if they demonstrate significant innovation and/or insight into physical chemistry. Joined experimental/theoretical studies are particularly appreciated when complementary and based on up-to-date approaches.














